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| MITSUBISHI HVIGBT MODULES CM800HA-50H HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE CM800HA-50H q IC...................................................................800A q VCES ....................................................... 2500V q Insulated Type q 1-element in a pack APPLICATION Inverters, Converters, DC choppers, Induction heating, DC to DC converters. OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 130 114 570.25 570.25 4 - M8 NUTS 20 E C C 1240.25 140 40 C E G C CM E E C E G CIRCUIT DIAGRAM 3 - M4 NUTS 10.35 10.65 48.8 61.5 18 6 - 7 MOUNTING HOLES 15 40 5.2 38 28 LABEL HVIGBT MODULES (High Voltage Insulated Gate Bipolar Transistor Modules) 5 Mar. 2003 30 MITSUBISHI HVIGBT MODULES CM800HA-50H HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE MAXIMUM RATINGS (Tj = 25C) Symbol VCES VGES IC ICM IE (Note 2) IEM (Note 2) PC (Note 3) Tj Tstg Viso -- -- Item Collector-emitter voltage Gate-emitter voltage Collector current Emitter current Maximum collector dissipation Junction temperature Storage temperature Isolation voltage Mounting torque Mass VGE = 0V VCE = 0V DC, TC = 80C Pulse Pulse TC = 25C, IGBT part Conditions Ratings 2500 20 800 1600 800 1600 6900 -40 ~ +150 -40 ~ +125 6000 6.67 ~ 13.00 2.84 ~ 6.00 0.88 ~ 2.00 1.5 Unit V V A A A A W C C V N*m N*m N*m kg (Note 1) (Note 1) -- -- Charged part to base plate, rms, sinusoidal, AC 60Hz 1min. Main terminals screw M8 Mounting screw M6 Auxiliary terminals screw M4 Typical value ELECTRICAL CHARACTERISTICS (Tj = 25C) Symbol ICES VGE(th) IGES VCE(sat) Cies Coes Cres QG td (on) tr td (off) tf VEC (Note 2) trr (Note 2) Qrr (Note 2) Rth(j-c)Q Rth(j-c)R Rth(c-f) Note 1. 2. 3. 4. Item Collector cutoff current Gate-emitter threshold voltage Gate-leakage current Collector-emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Emitter-collector voltage Reverse recovery time Reverse recovery charge Thermal resistance Contact thermal resistance Conditions VCE = VCES, VGE = 0V IC = 80mA, VCE = 10V VGE = VGES, VCE = 0V Tj = 25C IC = 800A, VGE = 15V Tj = 125C VCE = 10V VGE = 0V VCC = 1250V, IC = 800A, VGE = 15V VCC = 1250V, IC = 800A VGE1 = VGE2 = 15V RG = 3.75 Resistive load switching operation IE = 800A, VGE = 0V IE = 800A die / dt = -1600A / s Junction to case, IGBT part Junction to case, FWDi part Case to fin, conductive grease applied Min -- 4.5 -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- Limits Typ -- 6.0 -- 3.20 3.60 80 8.8 2.7 3.6 -- -- -- -- 2.90 -- 170 -- -- 0.008 Max 10 7.5 0.5 4.16 -- -- -- -- -- 1.60 2.00 2.50 1.00 3.77 1.20 -- 0.018 0.036 -- Unit mA V A V nF nF nF C s s s s V s C K/W K/W K/W (Note 4) Pulse width and repetition rate should be such that the device junction temp. (Tj) does not exceed Tjmax rating. IE, VEC, trr, Qrr & die/dt represent characteristics of the anti-parallel, emitter to collector free-wheel diode. Junction temperature (Tj) should not increase beyond 150C. Pulse width and repetition rate should be such as to cause negligible temperature rise. HVIGBT MODULES (High Voltage Insulated Gate Bipolar Transistor Modules) Mar. 2003 MITSUBISHI HVIGBT MODULES CM800HA-50H HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE PERFORMANCE CURVES OUTPUT CHARACTERISTICS (TYPICAL) 1600 Tj = 25C COLLECTOR CURRENT IC (A) TRANSFER CHARACTERISTICS (TYPICAL) 1600 VCE = 10V COLLECTOR CURRENT IC (A) VGE = 12V VGE = 11V 1200 VGE = 13V 1200 VGE = 14V VGE = 15V VGE = 20V 800 VGE = 10V 800 400 VGE = 9V VGE = 8V VGE = 7V 10 8 400 Tj = 25C Tj = 125C 0 0 4 8 12 16 20 0 0 2 4 6 COLLECTOR-EMITTER VOLTAGE VCE (V) GATE-EMITTER VOLTAGE VGE (V) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) 5 VGE = 15V 4 10 Tj = 25C 8 IC = 1600A 6 IC = 800A 4 3 2 1 Tj = 25C Tj = 125C 0 0 400 800 1200 1600 2 IC = 320A 0 0 4 8 12 16 20 COLLECTOR CURRENT IC (A) GATE-EMITTER VOLTAGE VGE (V) EMITTER-COLLECTOR VOLTAGE VEC (V) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) 5 CAPACITANCE Cies, Coes, Cres (nF) CAPACITANCE CHARACTERISTICS (TYPICAL) 103 7 VGE = 0V, Tj = 25C 5 Cies, Coes : f = 100kHz 3 Cres : f = 1MHz 2 102 7 5 3 2 101 7 5 3 2 Cies 4 3 2 Coes Cres 1 Tj = 25C Tj = 125C 0 400 800 1200 1600 0 100 10-1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 COLLECTOR-EMITTER VOLTAGE VCE (V) EMITTER CURRENT IE (A) Mar. 2003 MITSUBISHI HVIGBT MODULES CM800HA-50H HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE SWITCHING TIMES (s) 3 2 td(off) 100 7 5 3 2 td(on) tr tf 100 7 5 3 2 10-1 7 5 trr Irr 103 7 5 3 2 102 7 5 10-1 VCC = 1250V, VGE = 15V RG = 3.75, Tj = 125C 7 Inductive load 5 5 7 102 23 5 7 103 23 5 5 7 102 23 5 7 103 23 5 COLLECTOR CURRENT IC (A) EMITTER CURRENT IE (A) SWITCHING ENERGY (J/P) SWITCHING ENERGY (J/P) HALF-BRIDGE SWITCHING ENERGY CHARACTERISTICS (TYPICAL) 2.0 VCC = 1250V, VGE = 15V, RG = 3.75, Tj = 125C, 1.6 Inductive load HALF-BRIDGE SWITCHING ENERGY CHARACTERISTICS (TYPICAL) 3.0 2.5 2.0 1.5 1.0 0.5 0 1.2 Eon 0.8 Eoff 0.4 Erec 0 0 200 400 600 800 1000 0 5 10 15 20 25 30 CURRENT (A) GATE RESISTANCE () GATE CHARGE CHARACTERISTICS (TYPICAL) 20 GATE-EMITTER VOLTAGE VGE (V) NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth(j - c) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 101 7 5 3 2 100 7 5 3 2 10-1 7 5 3 2 10-2 10-3 2 3 5 7 10-2 2 3 5 7 10-1 2 3 5 7 100 TIME (s) Mar. 2003 VCC = 1250V IC = 800A 16 Single Pulse TC = 25C Rth(j - c)Q = 0.018K/W Rth(j - c)R = 0.036K/W 12 8 4 0 0 1000 2000 3000 4000 5000 GATE CHARGE QG (nC) REVERSE RECOVERY CURRENT Irr (A) HALF-BRIDGE SWITCHING TIME CHARACTERISTICS (TYPICAL) 5 REVERSE RECOVERY TIME trr (s) REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) 5 5 VCC = 1250V, Tj = 125C 3 Inductive load 3 2 VGE = 15V, RG = 3.75 2 |
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